- Heterostructure power transistor with AlSiN passivation layer

摘要

The hetero-structure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. An AlSiN passivation layer is disposed on the second active layer. The first and second ohmic contacts are electrically connected to the second active layer. The first and second ohmic contacts are laterally spaced apart and a gate is disposed between the first and second ohmic contacts.