RADIATION-RESISTANT LIBRARY OF ELEMENTS ON COMPLEX METAL-OXIDE-SEMICONDUCTOR OF TRANSISTORS

摘要

FIELD: electrical engineering.;SUBSTANCE: invention refers to the field of microelectronics.;EFFECT: technical result of the claimed invention is the creation of a radiation-resistant library of elements on complementary metal-oxide-semiconductor (CMOS) transistors with a smaller area of elements on a chip vertically proportional to the step of the topological grid, increased speed and increased yield of on-chip elements due to the arrangement of p+ protection along the outer boundary of the n-type sewers / sources of transistors with different potentials, while filling p+ with protection of the entire free substrate area, as well as by connecting polysiliated gates of transistors.;1 cl, 2 dwg