CONTACT-OVER-ACTIVE-GATE-STRUCTURES FOR MANUFACTURING AN ADVANCED INTEGRATED CIRCUIT STRUCTURE

摘要

Embodiments of the disclosure are in the field of fabricating an advanced integrated circuit structure and more particularly manufacturing a 10 nanometer node and smaller integrated circuit structure and the resulting structures. In one example, an integrated circuit structure includes first and second gate dielectric layers over a fin. The first and second gate electrodes are over the first and / or second gate dielectric layers, the first and second gate electrodes both having an insulating cover with an upper surface. A first dielectric spacer is adjacent to the first side of the first gate electrode. A trench contact structure is over a semiconductor source or drain region adjacent to a first and second dielectric spacer, the trench contact structure comprising an insulating cover on a conductive structure, wherein the insulating cover of the trench contact structure has an upper surface substantially coplanar with the insulating covers of first and second gate electrode.