USE OF A COMPOSITION FOR FORMING A PHOTORESIST UNDERLAYER FILM FOR LITHOGRAPHY, PHOTORESIST UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, AND RESIST PATTERN FORMING METHOD

摘要

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R 1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R 2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m2 is independently an integer of 0 to 7, in which at least one m 2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R 1 and R 2 is a group having an iodine atom.