首页> 外国专利> COMPOSITION, COMPOSITION FOR FORMING METAL- OR SEMIMETAL-CONTAINING FILM, METAL- OR SEMIMETAL-CONTAINING FILM AND PRODUCTION METHOD OF THE SAME, AND PATTERN FORMING METHOD

COMPOSITION, COMPOSITION FOR FORMING METAL- OR SEMIMETAL-CONTAINING FILM, METAL- OR SEMIMETAL-CONTAINING FILM AND PRODUCTION METHOD OF THE SAME, AND PATTERN FORMING METHOD

机译:组成,包含金属或含半金属的膜的组成,组成,包含金属或含半金属的膜及其制造方法和图案形成方法

摘要

To provide a composition excellent in storage stability, suppressing property for changes in a coating film thickness, and suppressing property for changes in resist sensitivity, a composition for forming a metal- or semimetal-containing film, a metal- or semimetal-containing film and a production method of the film, and a pattern forming method.SOLUTION: The composition of the present invention comprises a first compound containing at least one atom selected from metal atoms and semimetal atoms, and a second compound having a ketonic carbonyl group and an oxy organic group, in which the metal atoms belong to Group 2 to Group 17 of the periodic table. The second compound is preferably represented by formula (1). In formula (1), R, R, Rand Reach independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and Rand Reach independently represent a monovalent organic group having 1 to 20 carbon atoms. In formula (1), Rand Rare preferably alkyl groups having 1 to 6 carbon atoms.SELECTED DRAWING: None
机译:为了提供一种具有优异的储存稳定性,抑制涂膜厚度变化的性能以及抑制抗蚀剂感光度变化的性能的组合物,用于形成含金属或半金属的膜,含金属或半金属的膜的组合物和解决方案:本发明的组合物包括含有至少一个选自金属原子和半金属原子的原子的第一化合物,以及具有酮羰基和氧的第二化合物。有机基团,其中金属原子属于元素周期表的2至17组。第二化合物优选由式(1)表示。在式(1)中,R 1,R 2,R 3和R 6分别独立地表示氢原子或碳原子数1〜20的1价有机基团。 Rand Reach独立地表示碳数1〜20的一价有机基团。在式(1)中,Rand R优选为具有1至6个碳原子的烷基。

著录项

  • 公开/公告号JP2020042217A

    专利类型

  • 公开/公告日2020-03-19

    原文格式PDF

  • 申请/专利权人 JSR CORP;

    申请/专利号JP20180171020

  • 申请日2018-09-12

  • 分类号G03F7/11;G03F7/039;C07F7/28;C07F7;C07F9;C07F15;C07F5/06;H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 11:37:32

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