首页> 外国专利> A manufacturing method for manufacturing a laminated semiconductor device, a determination method for determining the size of a region to be trimmed, a determination method for determining a position for forming an electrode, a manufacturing system for manufacturing a laminated semiconductor device, a trimming device, and a lamination device.

A manufacturing method for manufacturing a laminated semiconductor device, a determination method for determining the size of a region to be trimmed, a determination method for determining a position for forming an electrode, a manufacturing system for manufacturing a laminated semiconductor device, a trimming device, and a lamination device.

机译:用于制造层压半导体器件的制造方法,用于确定要修剪的区域的尺寸的确定方法,用于确定形成电极的位置的确定方法,用于制造层压半导体器件的制造系统,修整器件,和层压装置。

摘要

PROBLEM TO BE SOLVED: To remove voids of a laminated semiconductor device at an inexpensive cost. A manufacturing method for manufacturing a laminated semiconductor device by laminating a first substrate and a second substrate, wherein a laminating step of laminating a first substrate and a second substrate and a laminating step are performed. Later, it comprises a trimming step of trimming at least one peripheral edge of the first substrate and the second substrate based on the position of the air bubbles between the first substrate and the second substrate. The size of the region to be trimmed in the trimming step may be a size from which at least a part of the bubbles is removed. [Selection diagram] Fig. 4
机译:解决的问题:以廉价的成本去除层叠的半导体器件的空隙。通过层压第一基板和第二基板来制造层压半导体器件的制造方法,其中执行层压第一基板和第二基板的层压步骤以及层压步骤。随后,其包括修整步骤,该修整步骤基于第一基板和第二基板之间的气泡的位置修整第一基板和第二基板的至少一个外围边缘。在修整步骤中要修整的区域的尺寸可以是从中去除至少一部分气泡的尺寸。 [选择图]图4

著录项

  • 公开/公告号JP2020136329A

    专利类型

  • 公开/公告日2020-08-31

    原文格式PDF

  • 申请/专利权人 株式会社ニコン;

    申请/专利号JP20190024038

  • 发明设计人 釜下 敦;

    申请日2019-02-14

  • 分类号H01L21/02;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 11:37:20

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