Evaluation method of oxide film pressure resistance characteristics of silicon wafer and manufacturing process control method of silicon wafer

摘要

PROBLEM TO BE SOLVED: To easily estimate a highly accurate oxide film pressure resistance defect rate in consideration of various defect types existing on a silicon wafer surface, and to easily evaluate an oxide film pressure resistance characteristic of a silicon wafer. Provides an evaluation method for. SOLUTION: A first step of totaling the number of defects by defect type in a reference wafer, a second step of measuring the oxide film withstand voltage of the reference wafer, and a third step of obtaining an oxide film withstand voltage defect rate for each defect type of the reference wafer. The process, the fourth step of totaling the number of defects by defect type in the wafer to be evaluated whose pressure film pressure resistance characteristics are unknown, the number of defects by defect type of the wafer to be evaluated, and the defect type calculated in the third step. After calculating the number of defects that cause oxide film withstand voltage failure for each type of defect in the evaluated wafer based on the oxide film withstand voltage defect rate, the fifth oxide film withstand voltage defect rate of the evaluated wafer is estimated from the total value. A method for evaluating the withstand voltage characteristics of an oxide film of a silicon wafer including a process. [Selection diagram] Fig. 1