Methods for Aligning Photolithography Masks and Corresponding Processes for Manufacturing UEFA Integrated Circuits for Semiconductor Materials

摘要

A photomask alignment method for the manufacturing process of integrated circuits of wafers (20) of semiconductor materials, at least the first criterion on the wafers (20) by a single photolithography process at the first level. Specifying at least one aligned structure (10; 10') with a mark (4a) and a second reference mark (4b) and, at levels above the first level, a first area mask (11a). , Aligned with at least the first reference mark (4a) and used with the first region mask (11a) for photolithography formation of the integrated circuits inside each of the dice (22) of the wafer (20). The second region mask (11b) is aligned with respect to at least one second reference mark (4b), and the first region mask (11a) and the second region mask (11b) are superposed on each other. A photomask alignment method comprising arranging on a wafer (20) adjacent to each other in a first coupling direction.