Method of manufacturing memristor structure and memristor structure

摘要

A method of manufacturing a memristor structure for symmetrically modulating between resistance states is presented. The method includes forming a first electrode and a second electrode on an insulating substrate, forming an anode in contact with the first electrode and the second electrode, and forming an ion on the anode. Forming a conductor, forming a cathode of the same material as the anode on the ionic conductor, forming a third electrode on the cathode, and bidirectional transport of ions between the anode and the cathode. And resulting in resistance adjustment of the memristor structure, the anode and cathode being formed from a metastable mixed conductive material having an ion concentration dependent conductivity. [Selection diagram] Figure 1