Method and apparatus for ion energy distribution manipulation for a plasma processing chamber enabling ion energy boosting via amplitude modulation

摘要

Methods and devices for boosting ion energy are contemplated herein. In one embodiment, a method and apparatus includes a controller, a processing chamber having a symmetrical plasma source configured to process a wafer, and a higher frequency (VHF) source coupled to the processing chamber to generate a plasma density. And two or more low frequency generators configured to generate low frequencies for one or more VHF sources, coupled to the bottom electrode of the processing chamber and dissipating energy in the plasma sheath on the bottom electrodes. Comprising, the controller controls one or more VHF sources to generate VHF signals and controls two or more low frequency generators to generate two or more low frequency signals.