BMD evaluation method for silicon single crystal and manufacturing method for silicon single crystal

摘要

To provide a method for evaluating the BMD of a silicon single crystal, capable of preventing a defective from occurring in an epitaxial growth film deposition step used as the next step.SOLUTION: A method for evaluating the BMD of a silicon single crystal, capable of evaluating the BMD of the silicon single crystal pulled by the Czochralski method comprises: a step S1 of acquiring the pulling actual data of the pulled silicon single crystal; and a step S3 of setting a crystal length subjected to pulling speed moving average processing in a crystal length range having revealed BMD striations by the acquired pulling actual data to determine that the BMD striations are abnormal when a pulling speed variation range after the pulling speed moving average processing is equal to or more than a width in which the BMD striations occur.SELECTED DRAWING: Figure 3