Silicon carbide semiconductor device, power converter, and method for manufacturing silicon carbide semiconductor device

摘要

The silicon carbide semiconductor device includes a trench gate type MOSFET and a trench type SBD. The gate trench (11) in which the gate electrode (13) of the MOSFET is embedded penetrates the source region (5) and the body region (4) and reaches the drift layer (3). The SBD trench (21) in which the Schottky electrode (22) of the SBD is buried penetrates the source region (5) and the body region (4) to reach the drift layer (3), and the side wall of the SBD trench (21) of the gate trench (11). It has a gentler slope than the side wall.