Silicon carbide semiconductor device, power converter, method for manufacturing silicon carbide semiconductor device, and method for manufacturing power converter

摘要

The semiconductor layer (11) has a first surface (P1), a second surface (P2), and a first side surface (S1). The silicon carbide substrate (12) has a third surface (P3) facing the second surface (P2), a fourth surface (P4), and a second side surface (S2). The first electrode layer (16) forms an interface with a part of the first surface (P1). The insulating film (15) is provided around the first electrode layer (16) on the first surface (P1) of the semiconductor layer (11). The second electrode layer (18) is provided on the fourth surface (P4), and in the in-plane direction, the interface between the first surface (P1) and the first electrode layer (16) is formed. It extends outside. A crushed layer (20) is provided over the first side surface (S1) of the semiconductor layer (11) and the second side surface (S2) of the silicon carbide substrate (12). The thickness of the crushed layer (20) on the second side surface (S2) is larger than the thickness of the crushed layer (20) on the first side surface (S1).