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Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin
Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin
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机译:通过在鳍的顶部和侧壁上注入来制造具有均匀张力的鳍式场效应晶体管(FinFET)器件的方法
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摘要
Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
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