Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing

摘要

A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base fin portion, a sacrificial portion provided on the base fin portion and a channel portion provided on the sacrificial portion. A doping source film is provided on the substrate over the layered fin structure, and diffusing doping materials from the doping source film into a portion of the layered fin structure other than the channel portion to form a diffusion doped region in the layered fin structure. An isolation material is provided on the substrate over at least the diffusion doped region of the layered fin structure.