Silicon nitride sintered substrate, silicon nitride sintered substrate sheet, circuit substrate, and production method for silicon nitride sintered substrate

摘要

Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm³ or higher, the density de of the end area is 3.160 g/cm³ or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.