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Post-lithography defect inspection using an e-beam inspection tool
Post-lithography defect inspection using an e-beam inspection tool
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机译:使用电子束检查工具进行光刻后缺陷检查
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摘要
Methods for post-lithographic inspection using an e-beam inspection tool of organic EUV sensitive photoresists generally includes conformal deposition of a silicon derivative or a metal oxide onto the relief image, wherein the silicon derivative is a material selected to have a dielectric constant that is greater than the dielectric constant of the underlying organic EUV sensitive photoresist. The conformal deposition of the silicon derivative or the metal oxide includes a low temperature vapor deposition process of less than about 100° C. to provide a coating thickness of less than about 5 nanometers.
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