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POST-LITHOGRAPHY DEFECT INSPECTION USING AN E-BEAM INSPECTION TOOL

机译:使用电子束检查工具的光刻后缺陷检查

摘要

Methods for post-lithographic inspection using an e-beam inspection tool of organic extreme ultraviolet sensitive (EUV) sensitive photoresists generally includes conformal deposition of a removable metal carboxide or metal carboxynitride onto the relief image. The conformal deposition of the metal carboxide or metal carboxynitride includes a low temperature vapor deposition process of less than about 100° C. to provide a coating thickness of less than about 5 nanometers. Subsequent to e-beam inspection, the metal carboxide or metal carboxynitride coating is removed using a wet stripping process. Once stripped, the wafer can continue on to further process fabrication without being a sacrificial wafer.
机译:使用有机极紫外敏感(EUV)敏感光刻胶的电子束检查工具进行光刻后检查的方法通常包括在浮雕图像上共形沉积可去除的金属碳氧化物或金属碳氮化物。金属碳氧化物或金属碳氮化物的保形沉积包括小于约100℃的低温气相沉积过程,以提供小于约5纳米的涂层厚度。在电子束检查之后,使用湿法汽提工艺去除金属碳氧化物或金属碳氮化物涂层。一旦剥离,晶片就可以继续进行进一步的工艺制造,而无需成为牺牲晶片。

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