Process of forming silicon nitride (SiN) film and semiconductor device providing SiN film

摘要

A low pressure chemical vapor deposition (LPCVD) technique for nitride semiconductor materials includes steps of: setting a temperature in a furnace to be 750 to 900° C.; substituting an atmosphere in the furnace to ammonia (NH₃); depositing a SiN film at an initial pressure by supplying di-chloro-silane (SiH₂Cl₂); and subsequently depositing the SiN film at a deposition pressure that is higher than the initial pressure. The invention has a feature that the initial pressure is at least higher than 60% of the deposition pressure.