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首页> 外文期刊>Thin Solid Films >Solution processed SiN_xC_yO_z thin films thermally transformed from silicon oxide/melamine hybrid system
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Solution processed SiN_xC_yO_z thin films thermally transformed from silicon oxide/melamine hybrid system

机译:由氧化硅/三聚氰胺混合体系热转化得到的固溶处理的SiN_xC_yO_z薄膜

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摘要

In this study, a solution-processable precursor of melamine and silicon oxide, was prepared and thermally converted into inorganic thin films of SiN_xC_yO_z. Using tetra-ethoxysilane and hydroxyl-methyl-melamine, a transparent coating with a high loading content of silica of up to 50% was achieved through the hydrolysis/ condensation reactions, which provided a transmittance of 85.1% (thickness of 1.5 ± 0.2 μm) and hard coating grade of 4H pencil test. When the silica/melamine coating was further heat-treated up to 900 ℃ in an inert environment, the organic melamine was converted into an inorganic compound composed of Si, N, C, and O atoms in the form of SiN_xC_yO_z. The relative compositions of films varied with the heat-treatment temperature, e.g., providing SiN_(0.03)C_(0.59)O_(1.87) for the thin film heat-treated at 700 ℃. The resulting inorganic thin films were mechanically strong and optically shiny with a low root mean square of roughness (<1.0 nm) giving dielectric constants varying from 2.75 to 1.82 with heat treatment temperature that could be used as low-k materials in commercialized optoelectronic devices.
机译:在这项研究中,制备了可溶液加工的三聚氰胺和氧化硅前驱体,并将其热转化为SiN_xC_yO_z无机薄膜。使用四乙氧基硅烷和羟基甲基三聚氰胺,可以通过水解/缩合反应获得二氧化硅的高负载含量高达50%的透明涂层,透光率达到85.1%(厚度为1.5±0.2μm)和4H铅笔测试的硬涂层等级。当二氧化硅/三聚氰胺涂层在惰性环境中进一步热处理至900℃时,有机三聚氰胺被转化为以SiN_xC_yO_z形式由Si,N,C和O原子组成的无机化合物。膜的相对组成随热处理温度而变化,例如,为在700℃下热处理的薄膜提供SiN_(0.03)C_(0.59)O_(1.87)。所得的无机薄膜机械强度高,光学光泽度高,具有低的均方根粗糙度(<1.0 nm),在热处理温度下介电常数范围为2.75至1.82,可在商业化的光电器件中用作低k材料。

著录项

  • 来源
    《Thin Solid Films》 |2013年第31期|294-302|共9页
  • 作者单位

    Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    KANEKA Corporation, 5-1-1 Torikai-Nishi, Settsu, Osaka 566-007, Japan;

    KANEKA Corporation, 5-1-1 Torikai-Nishi, Settsu, Osaka 566-007, Japan ,School of Advanced Materials Science & Engineering, Sungkyunkwan University 300, Chunchun-dong,Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    School of Advanced Materials Science & Engineering, Sungkyunkwan University 300, Chunchun-dong,Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    Department of Chemical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    Department of Chemical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    Department of Chemical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    Department of Chemical Engineering, Kyonggi University, 94-6 yiui-dong Yeongton-gu, Suwon, Gyeonggi-do 443-760, South Korea;

    Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea ,Department of Energy Science, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea;

    Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, South Korea ,Department of Mechanical Engineering, University of Nevada, Las Vegas, 4505 Maryland Parkway, Las Vegas, NV 89J54, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Sol-gel reaction; Low dielectric constant; Solution-processable; Silicon-based thin films; Hardness;

    机译:溶胶-凝胶反应;介电常数低;可溶液处理;硅基薄膜;硬度;

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