首页> 外国专利> PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS

PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS

机译:将薄层转移到具有不同热膨胀系数的支持基质上的过程

摘要

A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
机译:一种将由第一材料构成的薄层转移至由具有不同热膨胀系数的第二材料构成的支撑基板的方法,包括提供供体基板,该供体基板由由第一材料形成的厚层和手柄的组件构成具有与支撑基板的热膨胀系数相似的热膨胀系数的基板,以及在厚层的侧面具有主面的施主基板,将光种类引入厚层以在其中产生弱化平面并在两者之间限定薄层弱化平面和供体基底的主面;将供体基板的主面与支撑基板的面组装在一起;薄层在薄弱平面处的分离,该分离包括施加热处理。

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