首页> 外国专利> PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS

PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS

机译:将薄层转移到具有不同热膨胀系数的支撑基板的过程

摘要

A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
机译:用于将由第一材料组成的薄层与具有不同热膨胀系数的第二材料组成的薄层,包括提供由由第一材料和手柄形成的厚层的组件构成的供体基板。具有类似于支撑基板的热膨胀系数的基板,以及厚层侧的主面上的施主基板将光物质引入厚层,以在其中产生弱度平面并在其中限定薄层弱势平面和供体基材的主要面;用支撑基板的面部组装供体基板的主面;并且在弱势平面下薄层的脱离,脱离包括施加热处理。

著录项

  • 公开/公告号EP3646374B1

    专利类型

  • 公开/公告日2021-05-19

    原文格式PDF

  • 申请/专利权人

    申请/专利号EP20180732347

  • 申请日2018-06-21

  • 分类号H01L21/762;H01L41/312;

  • 国家 EP

  • 入库时间 2022-08-24 18:44:36

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号