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Transistor threshold voltage variation optimization
Transistor threshold voltage variation optimization
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机译:晶体管阈值电压变化优化
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摘要
One embodiment provides an apparatus. The apparatus includes a first transistor and a second transistor. The first transistor includes a first drain, a first source coupled to the first drain by a first channel, and a first gate stack comprising a plurality of layers. The second transistor includes a second drain, a second source coupled to the second drain by a second channel, and a second gate stack comprising a plurality of layers. Each gate stack includes a work function material layer to optimize a threshold voltage variation between the transistors.
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