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Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials
Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials
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机译:用于高迁移率沟道材料上的多个功函数栅叠层的多价氧化物盖
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摘要
A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area.
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