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MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS
MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS
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机译:高流动性通道材料上用于多功功能浇口堆叠的多价氧化盖
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摘要
A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area.
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