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Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
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机译:通过一次外延步骤对相同锗浓度的拉伸和压缩应变硅锗的结构和方法
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摘要
A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer.
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