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P-N junction based devices with single species impurity for P-type and N-type doping
P-N junction based devices with single species impurity for P-type and N-type doping
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机译:基于P-N结的具有单一杂质的器件,用于P型和N型掺杂
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摘要
A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
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