FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE LOCAL LAYOUT EFFECTS

摘要

Integrated chips and methods of forming the same include oxidizing a portion of a semiconductor fin, which includes a channel layer and an intermediate semiconductor layer, to electrically isolate active regions of the semiconductor fin by forming an oxide that fully penetrates the channel layer and the intermediate semiconductor layer. A semiconductor device is formed on each of the active regions.