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METHOD OF FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE LOCAL LAYOUT EFFECTS
METHOD OF FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE LOCAL LAYOUT EFFECTS
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机译:流动氧化物填充和蒸汽退火鳍片氧化减轻局部布局效应的方法。
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摘要
Integrated chips include a semiconductor fin that has a first active region and a second active region that are electrically separated by an oxide region that completely penetrates the semiconductor fin. A first semiconductor device is formed on the first active region. A second semiconductor device formed on the second active region.
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