Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

摘要

Oxide layers were grown on four-cyclic hexagonal silicon carbide substrates by using pyrogenic oxidation method and annealings in steam with different conditions were performed successively (successive annealing). The metal-oxide-semiconductor structures were formed on the oxide layers and capacitance-voltage characteristics were measured. It was found that the interface traps near the valence band edge decrease significantly by the successive annealing in steam.