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SEMICONDUCTOR MPS DIODE WITH REDUCED CURRENT-CROWDING EFFECT AND MANUFACTURING METHOD THEREOF
SEMICONDUCTOR MPS DIODE WITH REDUCED CURRENT-CROWDING EFFECT AND MANUFACTURING METHOD THEREOF
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机译:减小电流蔓延效应的半导体MPS二极管及其制造方法
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摘要
A merged-PN-Schottky, MPS, diode includes an N substrate, an N-drift layer, a P-doped region in the drift layer, an ohmic contact on the P-doped region, a plurality of cells within the P-doped region and being portions of the drift layer where the P-doped region is absent, an anode metallization on the ohmic contact and on said cells, to form junction-barrier contacts and Schottky contacts respectively. The P-doped region has a grid-shaped layout separating from one another each cell and defining, together with the cells, an active area of the MPS diode. Each cell has a same geometry among quadrangular, quadrangular with rounded corners and circular; and the ohmic contact extends at the doped region with continuity along the grid-shaped layout.
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