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Passivation of Silicon Dioxide Defects for Atomic Layer Deposition
Passivation of Silicon Dioxide Defects for Atomic Layer Deposition
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机译:用于原子层沉积的二氧化硅缺陷的钝化
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摘要
The present inventive concept is related to methods for passivating an oxide layer and methods of selectively depositing a metal, metal nitride, metal oxide, or metal silicide layer on a metal, metal oxide, or silicide layer over an oxide layer including exposing the oxide layer to a passivant that selectively binds to the oxide layer over the metal, metal oxide, or silicide layer, and selectively growing the metal, metal nitride, metal oxide or metal silicide layer on the metal, metal oxide or silicide layer.
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