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METHOD OF PRODUCING THIN LAYER OF LARGE AREA TRANSITION METAL DICHALCOGENIDES MOS2 AND OTHERS
METHOD OF PRODUCING THIN LAYER OF LARGE AREA TRANSITION METAL DICHALCOGENIDES MOS2 AND OTHERS
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机译:制备大面积过渡金属二硫化物MOS2及其他的薄层的方法
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摘要
An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.
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