Solution composition for forming thin film of transition metal dichalcogenide and method for producing transition metal dichalcogenide thin film using the same

摘要

The present invention relates to a solution composition for forming a transition metal dichalcogenide thin film and a method for manufacturing a transition metal dichalcogenide thin film using the same, and more particularly, dimethylformamide, butylamine and ethanolamine ( By dissolving a precursor of a transition metal dichalcogenide in a mixed organic solvent containing ethanolamine) and adding a separate sulfur-added carbon disulfide (CS 2 )-containing solution to prepare a solution for thin film formation, conventional chemical vapor phase It relates to a method of manufacturing a transition metal dichalcogenide thin film for an electronic device and an optical device that can be manufactured by simple heat treatment after coating the solution without using a deposition method. According to the present invention, by dissolving the precursor of the transition metal dichalcogenide compound in a mixed organic solvent containing dimethylformamide, butylamine and ethanolamine, the solubility of the precursor is increased and a chemically stable solution for forming a thin film is prepared possible. In addition, by using the solution for forming the thin film, it is possible to easily form a large-area transition metal dichalcogenide thin film by employing a coating or printing process without using CVD.