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LASER ABLATION SURFACE TREATMENT FOR MICROELECTRONIC ASSEMBLY

机译:微电子组件的激光烧蚀表面处理

摘要

A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.
机译:一种方法包括从引线框架的金属结构的表面的选定区域去除氧化物层以产生延伸穿过氧化物层以暴露金属结构的表面的部分的开口。该方法还包括:将半导体管芯附接到引线框架;执行将金属结构的表面的暴露部分电耦合到半导体管芯的导电部件的电连接过程;将半导体管芯封闭在封装结构中;以及将电子设备与引线框架分开。在一示例中,通过激光烧蚀工艺形成开口。在另一个示例中,通过使用掩模的化学蚀刻工艺来形成开口。在另一个示例中,通过等离子工艺形成开口。

著录项

  • 公开/公告号US2020273720A1

    专利类型

  • 公开/公告日2020-08-27

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INCORPORATED;

    申请/专利号US202016802819

  • 发明设计人 LEON STIBOREK;

    申请日2020-02-27

  • 分类号H01L21/48;H01L23/31;H01L23/495;H01L23;H01L21/56;

  • 国家 US

  • 入库时间 2022-08-21 11:22:48

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