SILICON CARBIDE SEMICONDUCTOR DEVICE, ELECTRIC POWER CONVERSION DEVICE, METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING ELECTRIC POWER CONVERSION DEVICE

摘要

A semiconductor layer has a first face, a second face, and a first side face. A silicon carbide substrate has a third face facing the second face, a fourth face, and a second side face. A first electrode layer forms an interface with part of the first face. An insulation film is provided around the first electrode layer on the first face of the semiconductor layer. A second electrode layer is provided on the fourth face and extends outward of the interface between the first face and the first electrode layer in an in-plane direction. A crush layer is provided on the first side face of the semiconductor layer and on the second side face of the silicon carbide substrate. The thickness of the crush layer on the second side face is greater than the thickness of the crush layer on the first side face.