Demonstration of Silicon Carbide Power Devices in Practical Power Conversion Systems

摘要

The goals of this project are: (1) to develop a design and processing sequence for high-power 4H-SiC bipolar junction transistors (BJTs) with blocking voltages above 1,000 V and on-state currents above 25 A; (2) to fabricate and package sufficient quantities of these devices to implement a demonstration motor control system; (3) to design and develop a prototype 40- 100 kW motor control system for demonstrating the SiC BJTs; and (4) to operate the SiC BJTs in the prototype system as a real-world test of the feasibility of this technology for practical power conversion systems.