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METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT
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机译:栅极与栅极接触之间具有导电层的鳍式场效应晶体管(FINFET)器件结构的形成方法
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摘要
A method for forming a FinFET device structure is provided. The method includes forming a fin structure over a substrate and forming a gate dielectric layer over the fin structure. The method also includes forming a gate electrode layer over the gate dielectric layer and forming a source/drain (S/D) structure adjacent to the gate electrode layer. In addition, the method includes forming an S/D contact structure over the S/D structure. The method also includes forming a first conductive layer in direct with the gate electrode layer. A bottom surface of the first conductive layer is lower than a top surface of the gate dielectric layer. The method further includes forming a second conductive layer over the first conductive layer. The gate electrode layer is electrically connected to the second conductive layer by the first conductive layer.
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