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FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT
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机译:栅极与栅极接触之间具有导电层的鳍式场效应晶体管(FINFET)器件结构
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摘要
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a gate dielectric layer formed over the fin structure. The FinFET device structure includes a gate electrode layer formed over the gate dielectric later and a gate contact structure formed over the gate electrode layer. The gate contact structure includes a first conductive layer formed over the gate electrode layer, a barrier layer formed over the first conductive layer and a second conductive layer over the barrier layer. The second conductive layer is electrically connected to the gate electrode layer by the first conductive layer.
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