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Semiconductor Devices Having Phase-Change Material (PCM) Radio Frequency (RF) Switches and Integrated Active Devices

机译:具有相变材料(PCM)射频(RF)开关和集成有源器件的半导体器件

摘要

An IC (“integrated circuit”) chip includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. An active device is situated in the substrate. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. In another approach, the PCM RF switch is situated in or above a first metallization level, and a dedicated heat spreader is situated under the PCM RF switch. Alternatively, a PCM RF switch is situated in a flip chip, an active device is situated in the IC chip, and the flip chip is situated over the IC chip forming a composite device.
机译:IC(“集成电路”)芯片包括衬底和相变材料(PCM)射频(RF)开关,其具有加热元件,位于加热元件上方的PCM以及位于加热元件的无源段上方的PCM触点。 PCM。加热元件横向于PCM延伸,并位于PCM的活动部分下面。有源器件位于衬底中。在一种方法中,PCM RF开关位于衬底上方,并且衬底是用于PCM RF开关的散热器。在另一种方法中,PCM RF开关位于第一金属化层中或上方,而专用散热器位于PCM RF开关下方。替代地,PCM RF开关位于倒装芯片中,有源器件位于IC芯片中,并且倒装芯片位于IC芯片上方,从而形成复合设备。

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