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THREE-DIMENSIONAL PACKAGING TECHNIQUES FOR POWER FET DENSITY IMPROVEMENT

机译:改善功率FET密度的三维包装技术

摘要

A packaging technology in which power switching elements, such as field-effect transistors (FETs), can be oriented in a vertical position relative to the printed circuit board (PCB) on which the product is mounted. The power die including the switching element(s) can essentially stand “on end” so that they take up very little PCB area. Multiple dies can be positioned this way, and the dies can be attached to a heat sink structure, which is designed to take the heat generated by the dies onto the top of the package. The heat sink structure can be attached to a structure to route the power and analog signals properly to the desired pins/leads/balls of the finished product. Using these techniques can result in a significant increase in the power density (both PCB space and solution volume) of power switching elements, e.g., FETs.
机译:一种封装技术,其中功率开关元件(例如场效应晶体管(FET))可以相对于其上安装有产品的印刷电路板(PCB)处于垂直位置。包括开关元件的功率管芯基本上可以“直立”站立,因此它们仅占很小的PCB面积。可以通过这种方式放置多个管芯,并且可以将管芯连接到散热器结构,该散热器结构旨在将管芯产生的热量带到封装的顶部。散热片结构可以连接到结构上,以将电源和模拟信号正确地路由到最终产品的所需引脚/引线/球。使用这些技术会导致功率开关元件(例如FET)的功率密度(PCB空间和解决方案体积)显着增加。

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