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SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE
SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE
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机译:超饱和电流场效应晶体管和跨阻MOS器件
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摘要
The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.
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