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SCHOTTKY DIODE WITH HIGH BREAKDOWN VOLTAGE AND SURGE CURRENT CAPABILITY USING DOUBLE P-TYPE EPITAXIAL LAYERS
SCHOTTKY DIODE WITH HIGH BREAKDOWN VOLTAGE AND SURGE CURRENT CAPABILITY USING DOUBLE P-TYPE EPITAXIAL LAYERS
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机译:肖特基二极管具有高的击穿电压和使用双P型外延层的浪涌电流能力
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摘要
A method for manufacturing a Silicon Carbide (SiC) Schottky diode may include steps of providing a substrate; forming a first epitaxial layer with a first conductivity type on top of the substrate; forming a second epitaxial layer with a second conductivity type on top of the first epitaxial layer; forming a third epitaxial layer with the second conductivity type on top of the second epitaxial layer; patterning and etching the second and third epitaxial layers to form a plurality of trenches; depositing a first ohmic contact metal on a backside of the substrate; forming a second ohmic contact metal on top of the second epitaxial layer; forming a Schottky contact metal at a bottom portion of each trench; and forming a pad electrode on top of the Schottky contact metal.
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