STACKED INTEGRATION OF lll-N TRANSISTORS AND THIN-FILM TRANSISTORS

摘要

Disclosed herein are IC structures, packages, and devices that include thin-film transistors (TFTs) integrated on the same substrate/die/chip as III-N transistors. An example IC structure includes an III-N transistor provided in a first layer over a support structure (e.g., a substrate), and a TFT provided in a second layer over the support structure. The second layer is above the first layer, and, therefore, the III-N transistor and the TFT are “stacked” transistors. This way, one or more III-N transistors may be integrated with one or more TFTs, enabling monolithic integration of PMOS transistors, provided by TFTs, on a single chip with III-N NMOS transistors. Such integration may reduce costs and improve performance, e.g., by reducing RF losses incurred when power is routed off chip in a multi-chip package. Stacked arrangement of III-N transistors and TFTs provides a further advantage of reducing the total surface area occupied by these transistors.