FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFETS) HAVING AMBIPOLAR CHANNELS

摘要

Ferroelectric field effect transistors (FeFETs) having ambipolar channels are described. In an example, an integrated circuit structure includes a channel layer above a substrate. The channel layer is composed of an ambipolar material. A ferroelectric oxide material is above the channel layer. A gate electrode is on the ferroelectric oxide material, the gate electrode having a first side and a second side opposite the first side. A first source/drain region is at the first side of the gate electrode, and a second source/drain region is at the second side of the gate electrode.