Vertical Organic Ferroelectric Field Effect Transistor (VO-FeFET) for Low Threshold Voltage and High On/Off Current Ratio

摘要

In this study, a vertical organic ferroelectric field effect transistor (VO-FeFET) has been developed for the low threshold voltage of 3 V and high on/off current ratio of 10(4). The ferroelectric dielectric layer of P(VDF-TrFE) is responsible for the promising characteristics of FET owing to its polarization behavior. Since the OFET is constructed vertically, the contact interface between the ferroelectric dielectric and organic semiconductor channel layers is indirectly formed. The performance of VO-FeFET is governed by the detrapping charge carrier mechanism at the P(VDF-TrFE) layer and the percolation of charge carrier via a porous network created by silver nanowires (AgNWs) that acted as a source electrode. The improvement in the surface RMS roughness from 38.403 nm to 18.047 nm with before and after the addition of AgNWs, respectively, proved the existence of desired morphology of VO-FeFET.