Nonvolatile memory device for performing a partial read operation and a method of reading the same

摘要

A nonvolatile memory device includes a first cell string including a first dummy cell and connected to a selected string select line, a second cell string including a second dummy cell and connected to the selected string select line, a page buffer circuit configured to select one of the first and second cell strings to read data in a read operation, and a control logic circuit configured to apply a first bit line voltage to a bit line connected to the selected one of the first and second cell strings and a second bit line voltage to a bit line connected to an unselected one of the first and second cell strings in the read operation. The control logic circuit turns off the second dummy cell when the first cell string is selected and turns off the first dummy cell when the second cell string is selected.