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Method of Forming a Semiconductor Device by High-Pressure Anneal and Post-Anneal Treatment
Method of Forming a Semiconductor Device by High-Pressure Anneal and Post-Anneal Treatment
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机译:通过高压退火和退火后处理形成半导体器件的方法
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摘要
Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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