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INFRARED DETECTION DEVICE, INFRARED DETECTION APPARATUS, AND MANUFACTURING METHOD OF INFRARED DETECTION DEVICE
INFRARED DETECTION DEVICE, INFRARED DETECTION APPARATUS, AND MANUFACTURING METHOD OF INFRARED DETECTION DEVICE
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机译:红外检测装置,红外检测装置以及红外检测装置的制造方法
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摘要
An infrared detection device includes a semiconductor substrate; a first metamorphic buffer layer that is formed on the semiconductor substrate; a first contact layer that is formed on the first metamorphic buffer layer; a first infrared absorption layer that is formed on the first contact layer; a second contact layer that is formed on the first infrared absorption layer; a second metamorphic buffer layer that is formed on the second contact layer; a third contact layer that is formed on the second metamorphic buffer layer; a second infrared absorption layer that is formed on the third contact layer; a fourth contact layer that is formed on the second infrared absorption layer; a lower electrode that is connected with the first contact layer; an upper electrode that is connected with the fourth contact layer; and an intermediate electrode that is connected with the second contact layer and the third contact layer.
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