Infrared detection film, infrared detection sensor and infrared detection display apparatus including the infrared detection film, and method of making the infrared detection film

摘要

An infrared detection film includes a gate electrode, a gate insulating layer, a majority-carrier channel layer, at least one drain terminal, at least one source terminal, and a photovoltaic semiconductor layer. The gate insulating layer is formed on the gate electrode. The majority-carrier channel layer is formed on the gate insulating layer. Each of the at least one drain terminal and the at least one source terminal is disposed on the majority-carrier channel layer and is spaced apart from the gate electrode. The photovoltaic semiconductor layer is disposed on an exposed portion of the majority-carrier channel layer exposed between the at least one drain terminal and the at least one source terminal.